This specification covers the detail requirements for silicon, NPN, transistors for use in high-power circuit applications and having the following particular characteristics at TA = + 25 Deg. plus/minus 3 Deg. C.
Product Details
Published:
07/13/2011
Number of Pages:
1
File Size:
1 file , 34 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus
