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Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (Surface Mount Package), Types 2N7479, 2N7480, and 2N7481, JANTXVR, F, G, and Hand JANSR, F, G, and H
MIL MIL-PRF-19500/703C – Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (Surface Mount Package), Types 2N7479, 2N7480, and 2N7481, JANTXVR, F, G, and Hand JANSR, F, G, and H
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G” and “H”) are provided for JANTXV and JANS product assurance levels.
Product Details
Published:
02/26/2014
Number of Pages:
23
File Size:
1 file , 250 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus
