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Transistor, Field Effect, Radiation Hardened, N-Channel, Device Type 2N7478T1, JANTXVR, F, G, and H and JANSR, F, G, and H standard by Military Specifications and Standards, 05/15/2013
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions.
Product Details
Published:
05/15/2013
Number of Pages:
20
File Size:
1 file , 290 KB
Note:
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