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Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, Types 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, and 1N5811CB, 1N5802CBUS, 1N5804CBUS, 1N5806CBUS, 1N5807CBUS, 1N5809CBUS, and 1N5811CBUS, JAN, JANTX, and JANTXV standard by Military Specifications and Standards, 08/28/2009
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated (noncavity double plug diodes utilizing category 3 metallurgical bonding) device types as specified in MIL-PRF-19500. This category 3 metallurgical bonding is also known as compression bonds (CB).
Product Details
Published:
08/28/2009
Number of Pages:
30
File Size:
1 file , 450 KB
Note:
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